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 MMBT4401K PNP Epitaxial Silicon Transistor
February 2005
MMBT4401K
PNP Epitaxial Silicon Transistor Switching Transistor
3
Marking
2 1
2XK
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
Ta = 25C unless otherwise noted
Parameter
Value
60 40 6 600 350 150
Units
V V V mA mW C
Electrical Characteristics Ta=25C unless otherwise noted
Symbol
BVCBO BVCEO BVEBO IBEV ICEX hFE
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage Base Cut-off Current Collector Cut-off Current DC Current Gain *
Test Condition
IC = 100A, IE = 0 IC = 1.0mA, IB = 0 IE = 100A, IC = 0 VCE = 35V, VEB = 0.4V VCE = 35V, VEB = 0.4V VCE = 1V, IC = 0.1mA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 150mA VCE = 2V, IC = 500mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA I C= 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 20mA, VCE = 10V, f = 100MHz VCB=5V, IE=0, f=100KHz VCC = 30V, VBE = 2V IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA IB1 = IB2 = 15mA
Min.
60 40 6
Max.
Units
V V V
100 100 20 40 80 100 40
nA nA
300 0.4 0.75 V V V V MHz 6.5 35 255 pF ns ns
VCE (sat) VBE (sat) fT Cob tON tOFF
Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Current Gain Bandwidth Product Output Capacitance Turn On Time Turn Off Time
0.75 250
0.95 1.2
* Pulse Test: Pulse Width300s, Duty Cycle2%
(c)2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
MMBT4401K Rev. A
MMBT4401K PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
1000
IC = 10 IB
hFE, DC CURRENT GAIN
VCE = 1V
1
VBE(sat)
100
0.1
VCE(sat)
10 1 10 100 1000
0.01 1 10 100 1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Base Capacitance
Figure 4. Current Gain Bandwidth Product
10000
10
Ccb [pF], CAPACITANCE
IE = 0 f = 100KHz
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
VCE = 10V
100
1 1 10 100
10 1 10 100
VCB [V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
2 MMBT4401K Rev. A
www.fairchildsemi.com
MMBT4401K PNP Epitaxial Silicon Transistor
Mechanical Dimensions
SOT-23
0.20 MIN 2.40
0.10
0.40 0.03
1.30
0.10
0.45~0.60
0.03~0.10 0.38 REF
0.40 0.03 0.96~1.14 2.90 0.10
0.12 -0.023
+0.05
0.95 0.03 0.95 0.03 1.90 0.03 0.508REF
0.97REF
Dimensions in Millimeters
3 MMBT4401K Rev. A
www.fairchildsemi.com
MMBT4401K PNP Epitaxial Silicon Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM
ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM
Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM
POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I15
4 MMBT4401K Rev. A
www.fairchildsemi.com


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